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| AOT402 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT402 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT402 is Pb-free (meets ROHS & Sony 259 specifications). AOT402L is a Green Product ordering option. AOT402 and AOT402L are electrically identical. TO-220 D Features VDS (V) = 105V ID = 110 A (VGS = 10V) RDS(ON) < 8.6 m (VGS = 10V) @ ID = 30A RDS(ON) < 10 m (VGS = 6V) Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 105 25 110 85 200 100 540 300 150 -55 to 175 Units V V A A mJ W C TC=25C TC=100C ID IDM IAR EAR PD TJ, TSTG TC=25C Repetitive avalanche energy L=0.3mH Power Dissipation B TC=100C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Steady-State Steady-State Symbol RJA RJC Typ 47 0.25 Max 60 0.5 Units C/W C/W Alpha & Omega Semiconductor, Ltd. AOT402 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=84V, VGS=0V TJ=55C VDS=0V, VGS=25V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=6V, ID=30A Forward Transconductance VDS=5V, ID=30A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=125C 2 200 6.9 12.8 7.9 88 0.7 1 110 7.7 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 820 300 1.25 182 VGS=10V, VDS=25V, ID=30A 54 44 30.5 VGS=10V, VDS=25V, RL=0.75, RGEN=3 IF=30A, dI/dt=100A/s 42.5 66 16 86 375 115 2 230 10 8.6 15 10 3.3 Min 105 1 5 100 4 Typ Max Units V A nA V A m m S V A nF pF pF nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/s A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev0: Sept. 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOT402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 175 150 5V 125 ID (A) 100 75 50 25 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 10 Normalized On-Resistance 9 RDS(ON) (m) 8 7 6 5 4 0 20 40 60 80 100 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 18 16 14 RDS(ON) (m) 12 10 8 1.0E-04 6 0 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 1.0E-03 ID=30A 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=6V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 VGS=6V ID=30A VGS=10V ID=30A VGS=4V 0 0 1 2 3 4 5 4.5V 20 125C 25C ID(A) 40 10V 6V 60 80 VDS=5V VGS(Volts) Figure 2: Transfer Characteristics VGS=10V 1.0E+02 1.0E+01 125C 1.0E+00 IS (A) 125C 1.0E-01 25C 1.0E-02 Alpha & Omega Semiconductor, Ltd. AOT402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=25V ID=30A 12000 10000 Ciss Capacitance (pF) 8000 6000 4000 Coss 2000 0 0 25 100 125 150 175 Qg (nC) Figure 7: Gate-Charge Characteristics 50 75 200 0 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 20 100 Crss 8 VGS (Volts) 6 4 2 0 1000.0 TJ(Max)=175C, TA=25C 10s 100.0 ID (Amps) RDS(ON) limited 100s 10ms 1.0 DC 1000 TJ(Max)=175C TA=25C 800 Power (W) 10.0 600 400 0.1 0.1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 1000 200 0.0001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Case (Note F) 0.001 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=0.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOT402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 ID(A), Peak Avalanche Current Power Dissipation (W) 0.01 100 80 60 40 T=150C 20 0 0.00001 T=25C 350 300 250 200 150 100 50 0 0.0001 0.001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 120 100 Current rating ID(A) 80 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
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